Silicon Carbide Wafer Laser Processing System

• Customization: Available
• After-sales Service: 1 Year
• Warranty: 1 Year
• Model NO.: HMLA-8680
• Lader-Power: ≥30W
• X Axes: Stroke 560mm, Resolution 0.1μm
• Y Axes: Stroke 430mm, Resolution 0.1μm
• Z Axes: Stroke 55mm, Resolution 0.5μm
• Theta Axis: Travel 360°, Resolution 0.001°
• Maximum Cut Ingot Thickness: 50mm
• Transport Package: Wooden Case
• Specification: 0*0*0
• Trademark: none
• Origin: China

Product Description

 

Product Description

The system is used for laser slicing processing of silicon carbide ingots/pieces. After the laser processing is completed, it is used with an auxiliary dicing device to complete wafer dicing after slicing. The material loss is small, while the processing efficiency is high. No consumables are required to operate the equipment, and the processing cost is low. It applied to wafer slicing processing of silicon carbide ingots (pieces)

Advantages

 1. Low material loss

 2. High processing efficiency

 3. No consumables are required to operate the equipment

 4. Low processing cost

Equipment Parameters
 

Laser types	solid-state laser
Laser power	≥30W
Cooling Type	Closed-circulating water cooling
X axes	Stroke 560mm, resolution 0.1 μ m
Y axes	Stroke 430mm, resolution 0.1 μ m
Z axes	Stroke 55mm, resolution 0.5 μ m
Theta axis	Travel 360°, resolution 0.001°
Maximum cut ingot thickness	50mm
Loading and unloading method	Fully automatic
Cutting shaft speed	0-1000mm/s
Laser processing loss	110-150 μ m (6 inches, 380 μ m thickness)
Processing efficiency	25min / pcs (6 inches, 380 μ m thickness)

Samples

 

Packaging & Shipping

 

 

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