The complete solution of SIC laser cutting includes: laser back metal slotting equipment, laser invisible cutting equipment, and fully automatic splitting equipment
This series of equipment is designed for the characteristics of silicon substrate wafer laser cutting, using ultraviolet lasers. A set of external optical path system is specially designed, combined with a high-precision CCD imaging positioning system and high-precision platform motion control, to achieve precision, efficiency, and almost no residue in the cutting groove cutting effect.
1. Multi spot cutting technology for efficient and high-quality processing
2. Fully automatic loading and unloading, unmanned and fully automatic operation
3. Compatible with the production of 2-inch, 4-inch, and 6-inch chips
4. Equipped with automatic gluing and cleaning functions
5. The platform's straightness and repeatability are both within 1um
6. Equipped with tangent and back cutting functions
Fully automatic SIC wafer laser cutting machine
Silicon carbide (SiC) has a wide range of applications, and if silicon carbide components become popular, power conversion devices will
Significant changes have occurred. Can be used for hybrid electric vehicles, air conditioners, and other white goods, as well as solar power generation
Distributed power supply systems such as electricity, wind power generation, fuel cells, industrial equipment, as well as general frequency converter devices and general switchesTurn off the power and other aspects.
Application field: Development of mature silicon carbide laser internal modification cutting equipment
A high-precision and high-efficiency cutting equipment for silicon carbide materials.
Main features:
Fully compatible with 4/6/8-inch wafer production;
Adopting efficient imported lasers, the process effect is stable;
Carrying a DRA self tracking system, the focus can be adjusted in real-time according to the thickness of the film,
CCD carries infrared imaging and has forward and backward cutting functions;
Equipped with a vacuum cracking system for small grain products to ensure film expansion yield.
Processing process: Cutting cracks (using a chopping knife or vacuum) and expanding the film
Using optical systems and lasers
Unique optical system module, compared to foreign counterparts, avoids the melting of silicon crystal confinement on the back side and improves the quality of the SD layer
Laser output center wavelength: infrared band
Repetition frequency: 50-200 KHz
High speed and high-precision operation platform
• X/Y stroke: 600 × 600 mm
Straight line ± 0.002 mm/250 mm
Positioning accuracy: ± 0.005 mm
X/Y axis travel speed: maximum 1000 mm/s
DRA self following system
Non contact measurement, real-time focusing system, using DRA autofocus during the cutting process, the focus is adjusted in real-time according to the changes in film thickness, ensuring laser focus for invisible cutting
The depth of the modified layer is consistent, and the thickness error is allowed to be within ± 10% μ m. Cutting depth error ± 5 μ Within m.
Process Introduction:
The splitting process is the process of applying a certain amount of slight pressure along the laser path to the product that has been laser scratched, causing it to fracture at the laser scratch point; The product is placed on a symmetrical support platform (with adjustable spacing in the middle), and the position of the laser cutting path is calibrated using a high-precision visual system (micrometer level positioning). The product is quickly lifted and lowered along the cutting path (at the laser scratch area) using a split blade (with a blade width of 5um) above the product. This technology is currently widely used in various brittle materials such as silicon wafers, sapphire, glass, and mixed materials, with a yield rate of over 99.6 in traditional industries. It has the technological advantages of high positioning accuracy, effective reduction of edge collapse, and solving incomplete twin crystal fracture.
Silicon carbide processing plan: chip facing upwards, blade cracking cutting path:
(1) The chopping knife directly acts on the chip, through visual positioning, and does not come into contact with areas outside the scratch;
(2) The blade width is about 5um, the flatness of the support platform is within 5um, and the positioning accuracy of the related core operating axis is within 2um to ensure the accuracy of the operation
(3) From the perspective of protecting the wafer and reducing the risk of edge collapse, it can be considered to add a layer of 25um non adhesive protective film on the front of the chip to prevent direct contact between the blade and the cutting path. The pressure exerted by the blade breaking outside the cutting path can be almost negligible. If the verification has an impact on the front structure of the chip, the blade can directly crack in the middle of the cutting path;
| NO |
project |
parameter |
| 1 |
Machinable crystal boundary size |
4inch,6inch,8inch |
| 2 |
Processing crystal boundary thickness |
50~750μm |
| 3 |
Processing speed |
maximum1000mm/s |
| 4 |
Laser output power |
<20W |
| 5 |
repetitive frequency |
0~200KHz |
| 6 |
X.Y-axis accuracy |
Repetitive positioning accuracy:±1μ M
X-axis straightness:±1μ M/300mm |
| 7 |
X.Y-axis maximum machining range |
300mm×300mm |
| 8 |
Z-axis repeated accuracy error |
±1μm |
| 9 |
θ axis |
Rotation angle:210°
Rotation resolution:15arc sec |
| 10 |
Platform flatness |
≤±5um(within 200mm range) |
| 11 |
CCD discrimination function |
Angle,horizontal,benchmark calibration,CCD light source brightness self
adjustment |
| 12 |
Identification system |
HANSLASER |
| NO |
project |
Regulations |
| 1 |
ambient temperature |
22ºC±2ºC |
| 2 |
relative humidity |
30~60% |
| 3 |
Cleanliness requirements |
10000 level or above |
| 4 |
Atmospheric pressure
(CDA) |
0.5-0.8Mpa |
| 5 |
power supply |
Single phase 220V,50Hz,above 16A |
| 6 |
Grid ground wire |
Complies with the national standard requirements of the computer room |
| 7 |
Power grid fluctuation |
<5% |
| 8 |
Equipment size |
1400(L)mm×2200(W)mm×2180(H)mm |
| 9 |
Equipment weight |
About 3 tons |
| 10 |
Occasions to avoid |
1.Places witha lotof garbage,dust,and oil mist;
2.Places with high vibrations and impacts;
3.Places that can reach drugs and flammable and explosive materials;
4.Places near high-frequency interference sources;
5.Places where temperature changes rapidly,
6.In environments with high concentrations of CO2,NOX,SOX,etc. |
The complete solution of SIC laser cutting includes: laser back metal slotting equipment, laser invisible cutting equipment, and fully automatic splitting equipment
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