Product Description
Using pulsed laser radiation with photon energy greater than GaN bandgap and smaller than sapphire bandgap to irradiate sapphire substrate, GaN is thermally decomposed into nitrogen gas and low melting point metal Ga (only 30 ºC) in a stable range of 900 ºC -1000 ºC, achieving the separation of GaN epitaxial layer and sapphire substrate.
Laser exfoliation technology utilizes laser energy to decompose the GaN buffer layer at the GaN/sapphire interface, thereby achieving the separation of LED epitaxial wafers from sapphire substrates. This device uses a DPSS laser and is specifically designed with an external optical path for wafer peeling, which can achieve efficient and high-quality peeling effects.
Using DPSS solid-state laser
Processable products: flat sheets, PSS, PSS+PVD
Fully automatic loading and unloading of 4-inch and 6-inch pieces for production, with the ability to manually feed 2-inch pieces for production
Stripping low damage, high yield, can work continuously for 24 hours, stable performance, and low operating costs
Process parameters are adjustable and storable
With log documents, in conjunction with the customer's SECS, processing parameters and processes can be uploaded and saved
The carrier can be lifted and lowered, and the focus can be adjusted through regional lifting compensation, which can solve the problem of chip warping
Metal trays are installed around the processing platform to prevent debris from falling into the interior of the equipment
Laser power automatic monitoring to ensure peeling effect
The equipment is equipped with EFU to ensure internal cleanliness of the machine
1. Fully automatic loading and unloading of 4-inch and 6-inch pieces within the processing range, with the ability to manually feed 2-inch pieces for production
2 lasers and optical path UV lasers, with a maximum processing power of ≥ 1W
3-platform Y-axis
Travel: 400mm
Repetitive positioning accuracy: ± 1um
4-platform X-axis
Travel: 350mm
Repetitive positioning accuracy: ± 1um
5-stage lifting W-axis lifting stroke: > 5mm
6. Full automatic loading and unloading mechanism
7 galvanometer and control system 1. Maximum speed: 5000mm/s
2. Accuracy: ± 15 um
8 Processing method 1. Spiral from outside to inside
2. Linear filling method
9 Laser processing efficiency 4 inch flat sheet: 240s/sheet (excluding loading and unloading)
(The time for single peeling may vary greatly depending on the product)
10 peeling efficiency 4 inches flat film: 8870 pieces/month (calculated at 22 hours/day, 28 days/month)
11 peel yield, appearance yield ≥ 98%, 4 inch flat film
12. Equipment utilization rate ≥ 95%
1. Power requirements: three-phase 380V ± 10%, 50/60Hz, 25A (max). Places to avoid
2. Environmental temperature and humidity of 21-23 ºC, with a temperature change of ± 1 ºC; RH40~70%, in places with no condensation, garbage, dust, or oil mist;
Places with high vibrations and impacts;
Places that can reach drugs and flammable and explosive materials;
Places near high-frequency interference sources;
Places where temperature changes rapidly;
In environments with high concentrations of CO2, NOX, SOX, etc.
3 Cleanliness level 1000
4 CDA pressure: > 0.5MPa; Flow rate: 250L/min; Pipe diameter: φ 12mm
5. The cooling water chiller uses ordinary bottled purified water and is replaced once a month
6. Compressed nitrogen N2 above 0.5MPa, purity ≥ 99.99%; Pipe diameter: φ 6mm
7. General exhaust pipe diameter: φ 100mm; Flow rate: 3CMM
8 Environmental vibration requirements: Foundation amplitude<5 μ M; Vibration acceleration<0.05G
1: 4 inch sample PSS substrate silicon wafer transfer layer
2: 4 inch sample PSS+AlN substrate silicon wafer transfer layer
3: 2 inch sample flat substrate silicon wafer transfer layer
Laser processing marks and local enlarged images
Overall rendering of laser processing and partial enlargement
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