Silicon Carbide Wafer Laser Cutting system Wafer Laser Cutting Machine

• Customization: Available
• After-sales Service: 1 Year
• Warranty: 1 Year
• Model NO.: HMLA-5560
• Processing Object: Silicon Carbide Wafers
• Laser Type: Infrared Picosecond Pulsed Laser
• Cooling Method: Air-Cooled
• X-Axis: Stroke 450mm, Resolution 0.1μm
• Y-Axis: Stroke 700mm, Resolution 0.1μm
• Z-Axis: Stroke 20mm, Resolution 0.1μm
• θ Axis: Travel 120°, Resolution 0.001°
• Transport Package: Wooden Case
• Specification: 0*0*0
• Trademark: none
• Origin: China

Product Description

Product Description

 

Uses ultra-short pulse laser to achieve high quality and high efficient cutting of silicon carbide wafer.

Specifications:

1. Processing object: silicon carbide wafers

2. Laser type: Infrared picosecond pulsed laser

3. Cooling method: air-cooled

4. X-axis: stroke 450mm, resolution 0.1μm

5. Y-axis: stroke 700mm, resolution 0.1μm

6. Z-axis:stroke 20mm,resolution 0.1μm

7. θ axis: travel 120°, resolution 0.001°

8. Maximum cutting thickness: 500μm

9. Maximum speed of cutting axis: 500mm/s

10. Processing size: 6 inches(upgradeable to 8 inches)
 

 

Equipment Advantage
1. Provide a complete set of split & expansion equipment, complete solution.
2. The process is mature and can be cut for different types of silicon carbide wafers.
3. Fast cutting speed, good cutting effect and high yield.
 

Applications

1.  Aerospace and Power Electronics Industries.

2. Specifically designed for cutting wafers with silicon carbide (SiC) substrates used in microwave devices and power devices.

Samples

 

Packaging & Shipping

 

 

Our Partner

 

After Sales Service