| Customization: | Available |
|---|---|
| After-sales Service: | 1 Year |
| Warranty: | 1 Year |
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A. Equipment overview
1.1 Equipment use: crystal material growth equipment.
1.2 VGF, HB, HGF, VB product features:
1.2.1 For crystal growth of GaAs and other compounds;
1.2.2 By structure: vertical growth, horizontal growth;
1.2.3 Growth mode: gradient growth and mobile growth;
1.3 Crystal growth size: 2-6 inches
1.4 Equipment classification :HB, HGF, VGF, VB
B.Main technical parameters
Special equipment for crystal film growth of compound semiconductor is provided to meet the production and research and development process of compound semiconductor devices.
|
Structural form |
Single tube horizontal,heating furnace body can move left and right |
|
Suitable crystal (customizable) |
2~4 inches |
|
Effective heating length of furnace body |
1600mm |
|
Maximum opening temperature |
1300ºC |
|
Accuracy of constant temperature zone (static closed tube) |
±0.5ºC |
|
Heating rate |
The temperature rise rate can be controlled 0~15ºC/min |
|
Cooling rate |
0~5ºC/min |
|
Power supply |
Three phase five wire ~380V±10% ,50Hz |
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