IGBT Laser Annealing La for Ion-Activation for Silicon IGBT with Excellent Thermal Budget Control

Product Details
Customization: Available
Condition: New
Warranty: 12 Months
Diamond Member Since 2023

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  • IGBT Laser Annealing La for Ion-Activation for Silicon IGBT with Excellent Thermal Budget Control
  • IGBT Laser Annealing La for Ion-Activation for Silicon IGBT with Excellent Thermal Budget Control
  • IGBT Laser Annealing La for Ion-Activation for Silicon IGBT with Excellent Thermal Budget Control
  • IGBT Laser Annealing La for Ion-Activation for Silicon IGBT with Excellent Thermal Budget Control
  • IGBT Laser Annealing La for Ion-Activation for Silicon IGBT with Excellent Thermal Budget Control
  • IGBT Laser Annealing La for Ion-Activation for Silicon IGBT with Excellent Thermal Budget Control
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  • Overview
  • Product Description
  • Application
  • Exhibition & Customers
  • Packaging & Shipping
  • FAQ
Overview

Basic Info.

Automatic Grade
Automatic
Installation
Vertical
Driven Type
Electric
Product Name
IGBT Laser Annealing
Feature 1
High Reliability and Stability
Feature 2
Independly Developped Optical System
OEM/ODM Service
Provided
Transport Package
Customized or Wooden Box Packaging
Specification
Standard Specifications
Trademark
Himalaya
Origin
China

Product Description

Product Description
IGBT Laser Annealing La for Ion-Activation for Silicon IGBT with Excellent Thermal Budget Control
Product Features
  • High reliability and stability

  • Independly developped Optical system

  • Excellent thermal budget control

  • 50μm ultra-thin TaiKo wafer handling capability

 

Technical specification
Wafer size 6 inch, 8 inch, 12 inch
Laser power 60W*2 90W*2 60W*2+300W 90W*2+300W
Laser energy density ≥5J/cm2×2
Activation efficiency ≥95%@B+ ≥90%@P+
RS non-uniformity WIW:≤1%@3sigma WTW:≤1%@3sigma
Application


IGBT Laser Annealing La for Ion-Activation for Silicon IGBT with Excellent Thermal Budget Control

Exhibition & Customers

IGBT Laser Annealing La for Ion-Activation for Silicon IGBT with Excellent Thermal Budget ControlIGBT Laser Annealing La for Ion-Activation for Silicon IGBT with Excellent Thermal Budget ControlJiangsu Himalaya Semiconductor Co., Ltd. Was established in 2019, mainly engaged in international trade and integration of semiconductor industry equipment. The equipment is currently imported and exported to over 30 countries, with over 200 customers and suppliers, aiming to control the procurement of the highest cost-effective products in the final stage for customers, and strive for one-time payment collection and risk avoidance for suppliers!
Our main products:Die Bonder,Wire Bonding,Laser Marking(ID IC Wafer),Laser Grooving,Laser Cutting(Glass Ceramics Wafers Packaging,Laser Internal Modification Machine Si /Sic Wafe,Laser Internal Modification Machine Lt/Ln Wafer,Laser Annealing Machine for Si/Sic,Automatic Dicing Saw Machine(Wafer Packaging)),Automatic Silicone Dispensing Equipment.

Packaging & Shipping

 

IGBT Laser Annealing La for Ion-Activation for Silicon IGBT with Excellent Thermal Budget Control
FAQ

Q1:How to choose a suitable machine?
A1:You can tell us the working piece material, size, and the request of machine function. We can recommend the most suitable machine according to our experience. 

Q2:What is the warranty period for the equipment?
A2:One year warranty and 24 hours online professional technical support.


Q3:How to choose a suitable machine?
A3:You can tell us the request of machine function. We can recommend the most suitable machine according to our experience. 

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